1/4 tyn210 ---> TYN1010 scr n high surge capability n high on-state current n high stability and reliability features the tyn210 ---> TYN1010 family of silicon controlled rectifiers uses a high performance glass passivated technology. this general purpose family of silicon controlled rectifiers is designed for power supplies up to 400hz on resistive or inductive load. description k a g to-220ab symbol parameter value unit i t(rms) rms on-state current (180 conduction angle) tc = 100c 10 a i t(av) average on-state current (180 conduction angle, single phase circuit) tc = 100c 6.4 a i tsm non repetitive surge peak on-state current (tj initial = 25c) tp = 8.3ms 105 a tp = 10ms 100 i 2 ti 2 t value tp = 10ms 50 a 2 s di/dt critical rate of rise of on-state current gate supply: i g = 100ma di g /dt = 1a/s 50 a/s tstg tj storage and operating junction temperature range -40 to +150 -40 to +125 c tl maximum lead soldering temperature during 10s at 4.5mm from case 260 c absolute ratings (limiting values) symbol parameter tyn unit 210 410 610 810 1010 v drm v rrm repetitive peak off-state voltage tj = 125c 200 400 600 800 1000 v k a g www.kersemi.com
tyn210 ---> TYN1010 2/4 symbol parameter value unit rth (j-a) junction to ambient 60 c/w rth (j-c) dc junction to case for dc 2.5 c/w gate characteristics (maximum values) p g(av) =1w p gm = 10w (tp = 20s) i fgm = 4a (tp = 20s) v rgm =5v thermal resistance symbol test conditions value unit i gt v d = 12v (dc) r l =33 w tj = 25c max. 15 ma v gt v d = 12v (dc) r l =33 w tj = 25c max. 1.5 v v gd v d =v drm r l = 3.3k w tj =110c min. 0.2 v tgt v d =v drm i g = 40ma di g /dt = 0.5a/s tj = 25c typ. 2 s i l i g = 1.2i gt tj = 25c typ. 50 ma i h i t = 100ma gate open tj = 25c max. 30 ma v tm i tm = 20a tp = 380s tj = 25c max. 1.6 v i drm i rrm v drm rated v rrm rated tj = 25c max. 0.01 ma tj = 110c max. 2 dv/dt linear slope up to v d = 67% v drm gate open tj = 110c min. 200 v/ m s tq v d =67%v drm i tm = 20a v r = 25v di tm /dt=30 a/ m sdv d /dt= 50v/ m s tj = 110c typ. 70 s electrical characteristics 0123456789 0 2 4 6 8 10 12 p(w) 360 o =180 o =120 o =90 o =60 o =30 o dc i(a) t(av) fig. 1: maximum average power dissipation ver- sus average on-state current. 0 20406080100120140 0 2 4 6 8 10 12 -115 -105 -120 -110 -100 -125 p (w) tcase ( c) o = 180 o tamb ( c) o rth = 0 c/w 2c/w 4c/w 6c/w o o o o fig. 2: correlation between maximum average power dissipation and maximum allowable temper- atures (tamb and tcase) for different thermal resistances heatsink + contact. www.kersemi.com
tyn210 ---> TYN1010 3/4 0 102030405060708090100110120130 0 2 4 6 8 10 12 i (a) t(av) = 180 o dc tcase ( c) o fig. 3: average on-state current versus case tem- perature. 1e-3 1e-2 1e-1 1e+0 1e+1 1e+2 5e+2 0.01 0.1 1 zth/rth zth(j-c) zth(j-a) tp(s) fig. 4: relative variation of thermal impedance versus pulse duration. fig. 5: relative variation of gate trigger current versus junction temperature. fig. 6: non repetitive surge peak on-state current versus number of cycles. fig. 7: non repetitive surge peak on-state current for a sinusoidal pulse with width: t 10ms, and cor- responding value of i 2 t. fig. 8: on-state characteristics (maximum values). www.kersemi.com
tyn210 ---> TYN1010 4/4 ordering type marking package weight base qty delivery mode tynxx10 tynxx10 to-220ab 2.3 g 250 bulk n epoxy meets ul94,v0 n cooling method: c n recommended torque value: 0.8 m.n. n maximum torque value: 1 m.n. other information package mechanical data to-220ab (plastic) m b l4 c b2 a2 l2 c2 l3 b1 a1 a f l i e c1 ref. dimensions millimeters inches min. typ. max. min. typ. max. a 15.20 15.90 0.598 0.625 a1 3.75 0.147 a2 13.00 14.00 0.511 0.551 b 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 c 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 2.40 2.70 0.094 0.106 f 6.20 6.60 0.244 0.259 i 3.75 3.85 0.147 0.151 i4 15.80 16.40 16.80 0.622 0.646 0.661 l 2.65 2.95 0.104 0.116 l2 1.14 1.70 0.044 0.066 l3 1.14 1.70 0.044 0.066 m 2.60 0.102 www.kersemi.com
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